jiangsu changjiang electronics technology co., ltd sot-89-3l plastic-encapsulate transistors D882H transistor (npn) feature ? low v ce(sat) ? large current capacity making: D882H maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 70 v v ebo emitter-base voltage 6 v i c collector current 3 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 /w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a, i e =0 70 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 70 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 6 v collector cut-off current i cbo v cb =40v, i e =0 1 a collector cut-off current i ceo v ce =30v, i b =0 10 a emitter cut-off current i ebo v eb =6v, i c =0 1 a dc current gain h fe v ce =2v, i c =1a 60 400 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 0.5 v base-emitter saturation voltage v be(sat) i c =2a, i b =0.2a 1.5 v transition frequency f t v ce =5v,i c =0.1a,f=10mhz 50 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 sot-89-3l 1. base 2. collector 3. emitter www.cj-elec.com 1 d , nov ,2015 b
200 400 600 800 1000 1200 1 10 100 1000 1 10 100 1000 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1 10 100 1000 1 10 100 1000 1 10 100 1000 10 100 1000 0.1 1 10 1 10 100 1000 02468 0 400 800 1200 1600 2000 common emitter v ce = 2v v be i c ?? base-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 3000 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 3000 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 3000 2000 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) v ce = 2v 3000 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) 20 8ma 7.2ma 6.4ma 5.6ma 4.8ma common emitter t a =25 4ma 3.2ma 2.4ma 1.6ma i b =0.8ma static characteristic collector current i c (ma) collector-emitter voltage v ce (v) typical characteristics www.cj-elec.com 2 d , nov ,2015 b
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 d , nov ,2015 b
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 d , nov ,2015 b
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